Real space transfer in a velocity modulated transistor structure
作者:
E. B. Cohen,
K. J. Webb,
D. B. Janes,
M. R. Melloch,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 21
页码: 2864-2866
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119026
出版商: AIP
数据来源: AIP
摘要:
We report experimental, room temperature data showing real space transfer in a heterostructure which can support the movement of electrons over a barrier in both directions between two channels. Real space transfer occurs between two channels connected in parallel in a three-gate transistor, which has been developed to interrogate the channel populations. Results are presented that demonstrate real space transfer in a heterostructure which features a 2.5:1 mobility ratio between channels. This heterostructure is designed for use in a velocity modulation transistor, which requires reciprocal, gate-assisted transfer between two channels of differing mobilities. ©1997 American Institute of Physics.
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