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Growth of Si on flat and vicinal Si(001) surfaces: A scanning tunneling microscopy study

 

作者: Y. W. Mo,   R. Kariotis,   B. S. Swartzentruber,   M. B. Webb,   M. G. Lagally,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1990）
卷期: Volume 8, issue 2  

页码: 232-236

 

ISSN:0734-211X

 

年代: 1990

 

DOI:10.1116/1.584816

 

出版商: American Vacuum Society

 

关键词: SILICON;SCANNING TUNNELING MICROSCOPY;EPIT AXIAL LAYERS;MOLECULAR BEAM EPITAXY;PHASE TRANSFORMATIONS;NUCLEATION;ADATOMS;MONOMERS;VAPOR PRESSURE;SELF−DIFFUSION;SURFACE CONTAMINATION;HIGH TEMPERATURE;ANNEALING;USES;Si

 

数据来源: AIP

 

摘要:

Scanning tunneling microscopy is used to investigate aspects of the initial stages of molecular‐beam epitaxy of Si on Si(001). A self‐diffusion coefficient is extracted. Anisotropic island shapes in the growth are attributed to an anisotropic lateral accommodation coefficient. Growth on vicinal surfaces shows that the barrier for atoms to cross a step cannot be much different from the barrier for migration on the terrace itself.

 

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