Modified substrate spontaneous emission in broad area semiconductor lasers
作者:
Malcolm W. Wright,
Gregory C. Dente,
David J. Bossert,
Michael L. Tilton,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 8
页码: 937-939
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.118446
出版商: AIP
数据来源: AIP
摘要:
We observe modification of the spontaneous emission spectrum emitted through the substrate of a quantum well semiconductor laser. The effect is driven by the proximity of the quantum well active region to the p-side electrical contact of the device, representing an excellent example of cavity quantum electrodynamics. Modification of the spontaneous emission rate and spectrum can be substantial; it must be accounted for in order to infer modal gain or carrier heating phenomena in the device correctly. ©1997 American Institute of Physics.
点击下载:
PDF
(83KB)
返 回