The redistribution of boron implanted into TaSi2/poly‐Si gates after high temperature anneals has been investigated as a function of the implantation dose and energy as well as the implantation scheme, i.e., boron implantation either into the silicide or into the poly‐Si prior to TaSi2deposition. Implantation and diffusion profiles were obtained by means of secondary ion mass spectrometry whereas the electrical characterization of the resulting structures was performed using high‐frequency capacitance–voltage measurements. The results indicate that boron can easily diffuse from TaSi2into poly‐Si and vice versa at 900 °C. Independent of the implantation scheme, the boron concentration within poly‐Si was found to saturate at ∼1×1019at/cm3for boron doses>5×1014at/cm2. The excess of boron always accumulates within the silicide. The solubility limit of boron within TaSi2was estimated to be>3.5×1020at/cm3. Boron concentrations of ∼1×1019at/cm3within poly‐Si were found to be sufficient to realizep+‐polycide gates with stable and reproducible threshold voltages similar top+‐poly‐Si gates. The observed boron redistribution behavior within the polycide is discussed in terms of combined lattice and grain boundary diffusion as well as grain boundary segregation.