Instabilities in the growth of AlxGa(1−x)As/Al/AlyGa(1−y)As structures by molecular beam epitaxy
作者:
K. Okamoto,
C. E. C. Wood,
L. Rathbun,
L. F. Eastman,
期刊:
Journal of Applied Physics
(AIP Available online 1982)
卷期:
Volume 53,
issue 3
页码: 1532-1535
ISSN:0021-8979
年代: 1982
DOI:10.1063/1.330652
出版商: AIP
数据来源: AIP
摘要:
Growth of epitaxial (Al,Ga)As/Al/(AlGa)As by molecular beam epitaxy was not found successful. Thermal expansion coefficient mismatch between Al and GaAs and reduction of Al melting point by partial dissolution of incident Ga and As species and with species diffusing across the metal‐semiconductor interface, make epitaxial (AlGa)As growth on Al above ∼300 °C impossible. Below ∼200 °C GaAs tends to be polycrystalline. Even below 480 °C GaAs becomes semi‐insulating by high deep level concentrations.
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