Etching of platinum thin films with dual frequency ECR/RF reactor
作者:
J. Baborowski,
P. Muralt,
N. Ledermann,
期刊:
Integrated Ferroelectrics
(Taylor Available online 1999)
卷期:
Volume 27,
issue 1-4
页码: 243-256
ISSN:1058-4587
年代: 1999
DOI:10.1080/10584589908228472
出版商: Taylor & Francis Group
关键词: dry etching;platinum;ECR ion gun;MEMS patterning
数据来源: Taylor
摘要:
Ferroelectric thin films for memory and MEMS applications require noble metal or refractory metal oxide electrodes. In this paper, physical and chemical mechanisms during platinum etching by a dual frequency ECR/RF reactor have been investigated. An ion beam was generated by means of a 50 mm diameter ECR-gun directed towards the substrate. The latter was placed on a RF powered electrode for discharging and local activation of reactive gas species. The removal characteristics of blanket platinum films and platinum films with a patterned mask (photoresist or SiO2masks) were investigated as a function of gas chemistry (Ar, halogen gases), ion beam energy (ion extraction/acceleration voltages), substrate bias RF power and working pressure (from 5 × 10−3Pa to 5 × 10−1Pa). The platinum etch process was characterized in terms of etch rate, selectivity, critical dimension, lateral uniformity and mask stability. A high rate etching processes (up to 100 nm/min with SiO2mask and 25 nm/min with removable photoresist) were obtained for micron scale patterns. Patterning of a complete layer stack PZT/Pt/SiO2could be achieved with a single photolithography step.
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