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Ultrahigh Be doping of Ga0.47In0.53As by low‐temperature molecular beam epitaxy

 

作者: R. A. Hamm,   M. B. Panish,   R. N. Nottenburg,   Y. K. Chen,   D. A. Humphrey,  

 

期刊: Applied Physics Letters  （AIP Available online 1989）
卷期: Volume 54, issue 25  

页码: 2586-2588

 

ISSN:0003-6951

 

年代: 1989

 

DOI:10.1063/1.101057

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Layers of Ga0.47In0.53As grown on InP by a beam epitaxy method have been doped with Be top=5×1020cm−3by growth at substrate temperatures as low as 365 °C. The maximum doping level is strongly growth temperature dependent. Heterostructure bipolar transistors with base dopingp=1×1020cm−3, current gain &bgr;=54, and unity current gain cutoff frequencyfT=140 GHz are illustrated.

 

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