Hall‐Effect Levels Produced in Te‐Doped GaAs Crystals by Cu Diffusion
作者:
C. S. Fuller,
K. B. Wolfstirn,
H. W. Allison,
期刊:
Journal of Applied Physics
(AIP Available online 1967)
卷期:
Volume 38,
issue 7
页码: 2873-2879
ISSN:0021-8979
年代: 1967
DOI:10.1063/1.1710016
出版商: AIP
数据来源: AIP
摘要:
Hall‐effect measurements have been made on Te‐doped GaAs crystals diffused with known amounts of64Cu sufficient to convert the crystals top‐type. Energy levels are found above the valence band at 0.123±0.005 eV, 0.145±0.005 eV, 0.166±0.005 eV, 0.19±0.005 eV, and 0.43±0.01 eV. An analysis of the Hall data has been made by means of computer programs. The results may be summarized as follows: (1) Ga vacancies produced during the Cu diffusion associate with and neutralize Te as a compensating center. (2) The ionization energy of the TeCuGapair is 0.19 eV rather than 0.166 eV as suggested previously.
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