SiO2and Si3N4films have been deposited at low temperatures by a new plasma enhanced evaporation process. The films are stoichiometric and have hydrogen contents below 1 at. %. For the electrical characterization metal–insulator–semiconductor diodes were fabricated and investigated before and after annealing in H2/N2atmosphere at 430 °C. Ellipsometric and capacitance–voltage measurements yield the dielectric constants which agree well with the theoretical values. From conductance–voltage characteristics the silicon–insulator interface state densityDitwas determined. After annealingDitamounts to 2×1011eV−1 cm−2for Si3N4and to 8×1010eV−1 cm−2for SiO2. In addition, the bulk resistivity and the surface resistivity of the deposited films were measured and compared with the values for films grown by conventional high temperature processes.