Activation energy for electromigration in Cu films
作者:
C. W. Park,
R. W. Vook,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 59,
issue 2
页码: 175-177
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.106011
出版商: AIP
数据来源: AIP
摘要:
Copper is a possible substitute for Al in very large scale integration interconnects because of its higher resistance to electromigration damage (EMD) and its lower electrical resistivity. In the present work, we report on electrical resistance measurements of the activation energy for EMD in Cu films as determined by an isothermal annealing method carried out under high vacuum conditions. Temperature measurement and control were accomplished by means of a Cu thin‐film thermistor. The activation energy for EMD of evaporated Cu films was found to be 0.79±0.02 eV.
点击下载:
PDF
(368KB)
返 回