Directional copper deposition using dc magnetron self-sputtering
作者:
Zbigniew J. Radzimski,
Witold M. Posadowski,
Stephen M. Rossnagel,
Shoso Shingubara,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1998)
卷期:
Volume 16,
issue 3
页码: 1102-1106
ISSN:1071-1023
年代: 1998
DOI:10.1116/1.590016
出版商: American Vacuum Society
关键词: Cu
数据来源: AIP
摘要:
A directional copper deposition process has been developed that uses a dc magnetron source operating in self-sputtering mode. The process is performed at10−5 Torrrange pressure where a “long throw” approach can be utilized without discharge enhancement or mechanical collimation due to a very long mean free path of sputtered species. Magnetron sputtering conditions at which the contact hole filling is promoted and substantially enhanced by the self-sputtering process are illustrated and compared to standard sputtering (i.e., short throw, mTorr pressure) in the presence of argon. The experimental parameters of the new process have been explored by depositing Cu on patterned Si wafers with trenches and contact holes of various aspect ratios.
点击下载:
PDF
(680KB)
返 回