作者: Aung San,
期刊: Journal of Applied Physics (AIP Available online 1974) 卷期: Volume 45, issue 2
页码: 968-968
ISSN:0021-8979
年代: 1974
DOI:10.1063/1.1663354
出版商: AIP
数据来源: AIP
摘要:
This reply is to establish that the data and the interpretation of the results of the paper commented upon are reliable. Practical details of the crucial factors that influenced the repeatable growth of epitaxial ZnSe on a (111) Ge are given.
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