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Influence of the desorption and growth temperatures on the crystalline quality of molecular‐beam epitaxy InAlAs layers

 

作者: F. Peiró,   A. Cornet,   A. Herms,   J. R. Morante,   A. Georgakilas,   G. Halkias,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1992）
卷期: Volume 10, issue 5  

页码: 2148-2152

 

ISSN:1071-1023

 

年代: 1992

 

DOI:10.1116/1.586181

 

出版商: American Vacuum Society

 

关键词: INDIUM ARSENIDES;ALUMINIUM ARSENIDES;MOLECULAR BEAM EPITAXY;DESORPTION;INDIUM PHOSPHIDES;TRANSMISSION ELECTRON MICROSCOPY;TEMPERATURE EFFECTS;CRYSTAL DEFECTS;TERNARY COMPOUNDS;(In,Al)As

 

数据来源: AIP

 

摘要:

The influence of molecular‐beam epitaxy growth conditions, especially oxide desorption and growth temperature, on the final quality of InAlAs layers grown on (100) InP substrates, has been analyzed by conventional and high‐resolution transmission electron microscopy observations. InP thermal cleaning prior growth at 500 °C has been found to produce rough interfaces and extended defects which propagate up to the surface, while thermal cleaning at 530 °C results in abrupt interfaces and improved epilayer structure. The increase of growth temperature up to 530 °C, also improves the crystalline quality of InAlAs.

 

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