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Misfit dislocations in (110), (112), and (113) homoepitaxial silicon crystals

 

作者: Masao Tamura,   Yoshimitsu Sugita,  

 

期刊: Journal of Applied Physics  （AIP Available online 1973）
卷期: Volume 44, issue 8  

页码: 3442-3444

 

ISSN:0021-8979

 

年代: 1973

 

DOI:10.1063/1.1662782

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Misfit dislocations generated in (110), (112), and (113) siliconp‐on‐p+epitaxial wafers are investigated through x‐ray topography. Dislocations observed are of mixed type and arranged along the intersection of the four {111} planes with the specimen surface. The dislocations are formed by slip to relieve the interfacial shear resulting from the misfit.

 

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