High electron mobility GaN/AlxGa1−xN heterostructures grown by low‐pressure metalorganic chemical vapor deposition
作者:
M. Asif Khan,
J. M. Van Hove,
J. N. Kuznia,
D. T. Olson,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 58,
issue 21
页码: 2408-2410
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.104886
出版商: AIP
数据来源: AIP
摘要:
In this letter we report the first observation of enhanced electron mobility in GaN/AlxGa1−xN heterojunctions. These structures were deposited on basal plane sapphire using low‐pressure metalorganic chemical vapor deposition. The electron mobility of a single heterojunction composed of 500 A˚ of Al0.09Ga0.91N deposited onto 0.3 &mgr;m of GaN was around 620 cm2/V s at room temperature as compared to 56 cm2/V s for bulk GaN of the same thickness deposited under identical conditions. The mobility for the single heterojunction increased to a value of 1600 cm2/V s at 77 K whereas the mobility of the 0.3 &mgr;m GaN layer alone peaked at 62 cm2/V s at 180 K and decreased to 19 cm2/V s at 77 K. A 18‐layer multiple heterojunction structure displayed a peak mobility of 1980 cm2/V s at 77 K.
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