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Observation of large Stark shift in GexSi1−x/Si multiple quantum wells

 

作者: J. S. Park,   R. P. G. Karunasiri,   K. L. Wang,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1990）
卷期: Volume 8, issue 2  

页码: 217-220

 

ISSN:0734-211X

 

年代: 1990

 

DOI:10.1116/1.584813

 

出版商: American Vacuum Society

 

关键词: MOLECULAR BEAM EPITAXY;GERMANIUM ALLOYS;SILICON ALLOYS;HETEROSTRUCTURES;OPTICAL PROPERTIES;PHOTOCURRENTS;MEASURING METHODS;(Ge,Si);Si

 

数据来源: AIP

 

摘要:

Large quantum‐confined Stark shift is observed in a type II GeSi/Si multiple quantum well structure for the first time. In this experiment, we have employed the photocurrent measurement using reverse biasedp‐i‐ndiodes with multiple quantum wells in thei‐region. The photocurrent as a function of bias is carried out at 77 and 300 K. The results show large red shift of the absorption edge which is about 0.75 meV kV−1 cm. This suggests the application of GeSi/Si type II structure for nonlinear electro‐optics devices near the 1.3 μm range.

 

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