Tests have shown that it is possible to switch a ferroelectric/photoconductor memory device between its ``1'' and ``0'' memory states in 10 &mgr;sec with 10 W/cm2irradiance. Both a He&sngbnd;Ne laser and a CRT have been used to address the device which stores the bits of information as close as 25 &mgr; apart. The device can retain stored information for more than 60 h with power off, and withstand 107disturb pulses in the dark.