Density of electronic states in a biased resonant tunneling structure
作者:
L. N. Pandey,
D. Sahu,
Thomas F. George,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 56,
issue 3
页码: 277-279
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.102807
出版商: AIP
数据来源: AIP
摘要:
We calculate the change in the density of states due to a biased resonant tunneling structure. The maximum of the density of states near resonance gets shifted towards the low‐energy side compared to the unbiased case, as does the transmission coefficient, although the two need not be identical. For the case of asymmetric barrier heights, the left‐right symmetry of the density of states is broken when the field is nonvanishing.
点击下载:
PDF
(274KB)
返 回