Annealing of ion implanted gallium nitride
作者:
H. H. Tan,
J. S. Williams,
J. Zou,
D. J. H. Cockayne,
S. J. Pearton,
J. C. Zolper,
R. A. Stall,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 72,
issue 10
页码: 1190-1192
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.121030
出版商: AIP
数据来源: AIP
摘要:
In this paper, we examine Si and Te ion implant damage removal in GaN as a function of implantation dose, and implantation and annealing temperature. Transmission electron microscopy shows that amorphous layers, which can result from high-dose implantation, recrystallize between 800 and 1100 °C to very defective polycrystalline material. Lower-dose implants (down to5×1013 cm−2), which are not amorphous but defective after implantation, also anneal poorly up to 1100 °C, leaving a coarse network of extended defects. Despite such disorder, a high fraction of Te is found to be substitutional in GaN both following implantation and after annealing. Furthermore, although elevated-temperature implants result in less disorder after implantation, this damage is also impossible to anneal out completely by 1100 °C. The implications of this study are that considerably higher annealing temperatures will be needed to remove damage for optimum electrical properties. ©1998 American Institute of Physics.
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