Preparation of InSb substrates for molecular beam epitaxy
作者:
W. K. Liu,
W. T. Yuen,
R. A. Stradling,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1995)
卷期:
Volume 13,
issue 4
页码: 1539-1545
ISSN:1071-1023
年代: 1995
DOI:10.1116/1.588184
出版商: American Vacuum Society
关键词: MOLECULAR BEAM EPITAXY;SUBSTRATES;INDIUM ANTIMONIDES;SURFACE CLEANING;ETCHING;SURFACE STRUCTURE;CRYSTAL DEFECTS;InSb
数据来源: AIP
摘要:
Several chemical cleaning procedures for InSb(100) substrates were studied. Nomarski microscopy, x‐ray photoelectron spectroscopy, and Auger electron spectroscopy were used to assess their credibility for use in molecular beam epitaxial growth of high quality films. The most satisfactory substrate surface was prepared using a modified CP4A etchant (HNO3:CH3COOH:HF:DI H2O at 2:1:1:10). This etchant was found to produce a flat surface with low defect density and a passivating layer consisting mainly of easily removable Sb oxide.
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