Using an off‐axis rf sputtering configuration, we have preparedinsituhigh‐TcYBa2Cu3O7−y(YBCO) films with a relatively large deposition rate. The sputtering gas was a mixture of Ar and O2(7:3) and the substrates were MgO(100) and SrTiO3(100). We found that the distance from the target to the substrate,d, is a key factor in the deposition rate. By decreasingdto a value of about 1.5–2.5 cm, we obtained a deposition rate as great as 2000–2500 A˚ per hour with an rf power of 120 W and at a total pressure 100–200 mTorr. The transport behaviors of the as‐grown YBCO films under magnetic fields are reported. The activation energy derived from the resistive transition in magnetic fields is thickness dependent.