Thin films of lead titanate(PbTiO3)were prepared on silicon substrates by sputtering. Two processes have been developed; (a) thein situprocess (the growth temperature was 440 °C) and (b) the deposition at room temperature followed by a conventional annealing at 680 °C. The dielectric constant, the ferroelectric, and the piezoelectric properties were evaluated and compared. The dielectric constant of films depositedin situwas higher than those of postannealed films likely due to the dense microstructure with fine and homogeneous grains. The embedded beam method and the Berlincourt piezometer were used to measure thee31and thed33piezoelectric coefficients, respectively. ThePbTiO3films were naturally polarized, in particular the films grownin situhave large piezoelectric constants:e31=−0.49 C/m2andd33=20 pC/N.These values agree broadly with data of bulk ceramics, however, with bulk material a poling treatment is necessary to attain these values. The poling of the postannealed films leads to a substantial increase of their piezoelectric properties;e31=−0.26 C/m2andd33=8 pC/Nfor virgin film ande31=−0.41 C/m2−d33=18 pC/Nfor an applied electric field of 110 kV/cm (close to saturation) and a poling time of 30 min. The piezoelectric response was found to depend on the direction of the poling field. Noted33ande31decreased when the poling field was applied against the preferred polarization direction; the polar domains were oriented from the film surface to the substrate.