Carrier relaxation in self-assembled quantum dots due to Coulomb interaction with two dimensional (2D) carriers is studied theoretically. Auger coefficients for carrier relaxation rates are calculated in the dipole approximation for Coulomb interaction. The dipole approximation allows one to derive selection rules for Auger relaxation in a cylindrical quantum dot, and to describe a general picture of Auger relaxation via energy levels in self-assembled quantum dots. A numerical example for InAs/GaAs self-assembled quantum dots demonstrates that the Auger effect may lead to relaxation times in the order of 1–10 ps at 2D carrier densities of1011–1012 cm−2.This result demonstrates the possibility of fast carrier relaxation in quantum dots if the carrier density in the surrounding barrier is sufficiently high. Analytical formulas for Auger coefficients are derived for moderate temperatures of the 2D carriers. ©1997 American Institute of Physics.