We describe the growth, ion beam, and photoluminescence characterization of Ga1−xInxAs/GaAs strained‐layer superlattices grown along the [111] axis. The layer thicknesses and composition are determined by Rutherford backscattering. Normal incidence channeling gives a minimum channeling yield of 5.7%. Strain conditions are found by off‐normal incidence channeling using the angular scan method. Comparison of the photoluminescence spectrum of the superlattice with theoretical calculations provides strong evidence for the existence of strain‐generated electric fields in [111] growth axis strained‐layer superlattices.