We report on large in‐plane anisotropic transport properties observed in epitaxial Bi2(Sr,Ca)3Cu2Oxfilms grown on tilted (001)SrTiO3substrate. By tilting the surface normal axis about 4° toward [111]SrTiO3, regular steps and terraces were formed on the substrate surface and perfect alignment of filmbaxis with incommensurate modulation along [110]SrTiO3was realized. The filmcaxis was perpendicular to the (001)SrTiO3terrace, thus the filmcaxis grew tilted 4° toward [111] from surface normal due to the surface inclination. In those epitaxial configurations, the in‐plane resistivity along the step direction(&rgr;[110]) involved the contribution from thec‐axis(&rgr;c) component, and we observed the large resistivity anisotropy betweena‐ andb‐ direction of the film. The transport alongaaxis(&rgr;a) showed a low resistivity with metallic temperature dependence while the resistivity along the step direction(&rgr;[110]) was higher and semiconductive. The ratio of &rgr;c/&rgr;a≊ 104estimated in this experiment agrees well with the anisotropy observed in the bulk single crystal.