Hot electron relaxation dynamics in ZnSe
作者:
Manjusha Mehendale,
S. Sivananthan,
W. Andreas Schroeder,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 8
页码: 1089-1091
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119736
出版商: AIP
数据来源: AIP
摘要:
The ultrafast relaxation dynamics of hot electrons, initially photoexcited with an excess energy of 300 meV, are monitored in a high-quality ZnSe epilayer grown on a GaAs substrate by exploiting the intrinsic interferrometric asymmetric Fabry–Perot sample structure. The results are consistent with the expected characteristic electronic LO-phonon emission time of 40–50 fs and provide evidence for the influence of the “hot phonon effect”(or “LO-phonon bottleneck”) on the electron cooling dynamics at carrier densities above∼3×1017 cm−3.©1997 American Institute of Physics.
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