Misfit dislocations in strained InxGa1−xAs heterostructure on patterned GaAs (001) substrate
作者:
W. Zeng,
S. S. Jiang,
C. Ferrari,
S. Gennari,
G. Salviati,
J. H. Jiang,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1996)
卷期:
Volume 14,
issue 6
页码: 3588-3592
ISSN:1071-1023
年代: 1996
DOI:10.1116/1.588730
出版商: American Vacuum Society
关键词: GaAs;(In,Ga)As
数据来源: AIP
摘要:
〈110〉 60° and 〈100〉 edge misfit dislocations in In0.06Ga0.94As heterostructures grown on patterned GaAs (001) substrates with relatively low misfitf(f=0.0043) have been investigated. The reduction of 〈110〉 misfit dislocation density on mesas is observed by cathodoluminescence, while the 〈100〉 misfit dislocation density on mesas observed by synchrotron radiation double crystal topography remains unchanged. The critical thickness is calculated by modifying the Matthews mechanical equilibrium theory introduced by Chidambarraoetal. The calculated results can be applied to both the nonpatterned area and the sidewalls of the mesa. The critical thickness of one side of the mesa is larger than that of nonpatterned areas. The critical thickness of both sides of mesas is dependent on the angle between the sidewall and (001) GaAs. This is likely due to different values of cos φ/sin ψ, which determines the values of the friction forceFFwith different sidewall angles. It is suggested that the 〈100〉 misfit dislocations are generated by climb and they can cross mesas by climbing along 〈100〉 directions.
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