Analysis of ion implanted diamond
作者:
L.A. Davidson,
S. Chou,
J.F. Gibbons,
W.S. Johnson,
期刊:
Radiation Effects
(Taylor Available online 1971)
卷期:
Volume 7,
issue 1-2
页码: 35-44
ISSN:0033-7579
年代: 1971
DOI:10.1080/00337577108232562
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
Ion implantation allows controlled introduction of impurities into diamond. A basic problem is to determine if the implanted layers are dominated by substitutional doping or radiation damage effects. Optical and electrical measurements on the implanted diamonds revealed (1) a degradation of the band-gap and sample coloration, (2) no optical absorption levels which would be characteristic of hydrogenic ionization levels, (3) resistivity activation energies of 0.2 to 0.3 eV independent of the ion specie, and (4) no measurable Hall Effect.
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