Atomic displacement processes in irradiated amorphous and crystalline silicon
作者:
K. Nordlund,
R. S. Averback,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 23
页码: 3101-3103
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119104
出版商: AIP
数据来源: AIP
摘要:
Ion beam mixing was investigated in crystalline and amorphous Si using molecular dynamics simulations. The magnitude of mixing was found to be larger in amorphous Si by a factor of about 2. The difference is attributed to local relaxation mechanisms occurring during the cooling down phase of the cascade. Comparison of mixing between Si and Al shows that short range structural order also has a significant influence on mixing. ©1997 American Institute of Physics.
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