Nucleation of misfit dislocations in In0.2Ga0.8As epilayers grown on GaAs substrates
作者:
Y. Chen,
Z. Liliental‐Weber,
J. Washburn,
J. F. Klem,
J. Y. Tsao,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 66,
issue 4
页码: 499-501
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.114069
出版商: AIP
数据来源: AIP
摘要:
Misfit dislocation arrays in In0.2Ga0.8As epilayers grown on GaAs substrates tilted 2°–10° away from exact (001) toward varied directions have been studied by transmission electron microscopy. A method has been developed to determine the glide plane and the Burgers vector of each misfit dislocation in the tilted InGaAs/GaAs interfaces. Based on experimental observations and theoretical analyses, it is proposed that a stacking fault surrounded by a 30° partial is at first generated by a growth error, followed by thermally activated nucleation of a 90° partial dislocation that removes the stacking fault and forms a 60° dislocation. From the frequency of nucleation events versus the dislocation glide force, the energy barrier for dislocation nucleation of &agr; and &bgr; 90° partial dislocations was determined to be equal to 1.5 and 1.4 eV, respectively. ©1995 American Institute of Physics.
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