(311)Asubstrates suppression of Be transport during GaAs molecular beam epitaxy
作者:
Kazuhiro Mochizuki,
Shigeo Goto,
Chuushiro Kusano,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 58,
issue 25
页码: 2939-2941
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.104728
出版商: AIP
数据来源: AIP
摘要:
The influence of substrate orientation on Be transport during GaAs molecular beam epitaxy is studied by secondary‐ion mass spectrometry. Substrates are misoriented from (100) toward (111)A, and the epitaxial growth is performed at 630 °C for Be doping at (5–7)×1019cm−3. Surface segregation and anomalous diffusion similarly depend on substrate orientation. With (311)Aorientation, the Be transport is dramatically reduced from its value with conventional (100) orientation. These results are qualitatively explained by considering the effect of atomic steps on the growing surface.
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