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New transitions in the photoluminescence of GaAs quantum wells

 

作者: R. C. Miller,   D. A. Kleinman,   O. Munteanu,   W. T. Tsang,  

 

期刊: Applied Physics Letters  (AIP Available online 1981)
卷期: Volume 39, issue 1  

页码: 1-3

 

ISSN:0003-6951

 

年代: 1981

 

DOI:10.1063/1.92548

 

出版商: AIP

 

数据来源: AIP

 

摘要:

When GaAs quantum wells are optically excited with intensities ≳10 kW/cm2new peaks appear in the photoluminescence spectrum at low temperatures. The excitation spectra are used to demonstrate that the new peaks correspond to the recombination of electrons in excited well states,n≳1, with holes inn= 1 states. These parity‐forbidden transitions, &Dgr;nodd, derive their strength from three body interactions that occur at high excitation levels.

 

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