New transitions in the photoluminescence of GaAs quantum wells
作者:
R. C. Miller,
D. A. Kleinman,
O. Munteanu,
W. T. Tsang,
期刊:
Applied Physics Letters
(AIP Available online 1981)
卷期:
Volume 39,
issue 1
页码: 1-3
ISSN:0003-6951
年代: 1981
DOI:10.1063/1.92548
出版商: AIP
数据来源: AIP
摘要:
When GaAs quantum wells are optically excited with intensities ≳10 kW/cm2new peaks appear in the photoluminescence spectrum at low temperatures. The excitation spectra are used to demonstrate that the new peaks correspond to the recombination of electrons in excited well states,n≳1, with holes inn= 1 states. These parity‐forbidden transitions, &Dgr;nodd, derive their strength from three body interactions that occur at high excitation levels.
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