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4 W quasi-continuous-wave output power from 2 &mgr;m AlGaAsSb/InGaAsSb single-quantum-well broadened waveguide laser diodes

 

作者: D. Z. Garbuzov,   R. U. Martinelli,   H. Lee,   R. J. Menna,   P. K. York,   L. A. DiMarco,   M. G. Harvey,   R. J. Matarese,   S. Y. Narayan,   J. C. Connolly,  

 

期刊: Applied Physics Letters  （AIP Available online 1997）
卷期: Volume 70, issue 22  

页码: 2931-2933

 

ISSN:0003-6951

 

年代: 1997

 

DOI:10.1063/1.118747

 

出版商: AIP

 

数据来源: AIP

 

摘要:

AlGaAsSb/InGaAsSb single-quantum-well (SQW) laser diodes emitting at 2 &mgr;m were fabricated and tested. At 10–15 °C, the uncoated SQW lasers with 2–3 mm cavity lengths exhibit a threshold current density of115 A/cm2,a continuous-wave output power of 1.9 W, a differential efficiency of 53&percent;, and a quasi-continuous-wave output power of 4 W. Their performance deteriorates rapidly as output losses increase beyond10 cm−1.©1997 American Institute of Physics.

 

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