Vacuum evaporation and sputtering processes of materials in use or under investigation for passive thin-film components in integrated circuits are reviewed. Molybdenum, silver, gold, and the platinum metals have been considered to replace aluminum contacts and interconnections. However, silicide formation at low temperatures and lack of the required contact properties limit their usefulness. Dielectric materials amenable to controlled deposition are silicon monoxide and dioxide. Both oxides have low dielectric constants and are more suitable for insulation layers than for capacitors. To produce stress-free, nonhygroscopic SiO films, control of deposition conditions is most important. The integration ofSiO2films depends on the availability of a process yielding good properties at low deposition temperatures. Radio frequency sputtering seems to meet these requirements. Nichrome and Cr-SiO cermet are possibilities for integrated thin-film resistors. Their fabrication techniques and the resulting properties are reviewed. Tighter process control than presently possible is needed for integration into monolithic circuits.