Use of nonstoichiometry to form GaAs tunnel junctions
作者:
S. Ahmed,
M. R. Melloch,
E. S. Harmon,
D. T. McInturff,
J. M. Woodall,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 25
页码: 3667-3669
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.120475
出版商: AIP
数据来源: AIP
摘要:
A tunnel diode was formed from GaAs containing excess arsenic incorporated by molecular beam epitaxy at reduced substrate temperatures. The incorporation of excess arsenic during growth results in a more efficient incorporation of silicon on donor sites and beryllium on acceptor sites. The better dopant incorporation, along with trap assisted tunneling through deep levels associated with the excess arsenic, results in a tunnel junction with record peak current density of over1800 A/cm2,zero-bias specific resistance of under1×10−4 &OHgr; cm,and a room-temperature peak-to-valley current ratio of 28. ©1997 American Institute of Physics.
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