I–Vcharacteristics of modified silicon surface using scanning probe microscopy
作者:
Takao Yasue,
Hiroshi Koyama,
Tadao Kato,
Tadashi Nishioka,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1997)
卷期:
Volume 15,
issue 3
页码: 614-617
ISSN:1071-1023
年代: 1997
DOI:10.1116/1.589302
出版商: American Vacuum Society
关键词: Si
数据来源: AIP
摘要:
Using scanning probe microscopy, we have modified a silicon surface and measured its current–voltage(I–V)characteristics. In the modified area, both an increase in film thickness and a decrease in current caused by field-induced oxidation (FIO) have been observed. TheI–Vcharacteristics of the FIO film shows a good fit to a Fowler–Nordheim (FN) tunneling current model. The barrier height determined by a FN plot shows a good agreement with that of conventional metal–oxide–semiconductor structure with thermal thick silicon oxide.
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