Growth of AlxGa1−xN:Ge on sapphire and silicon substrates
作者:
X. Zhang,
P. Kung,
A. Saxler,
D. Walker,
T. C. Wang,
M. Razeghi,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 67,
issue 12
页码: 1745-1747
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.115036
出版商: AIP
数据来源: AIP
摘要:
AlxGa1−xN were grown on (00.1) sapphire and (111) silicon substrates in the whole composition range (0≤x≤1). The high optical quality of the epilayers was assessed by room‐temperature optical absorption and photoluminescence measurements. Layers with higher Al composition are more resistive. Resistive AlxGa1−xN epilayers were successfully doped with Ge and free‐electron concentration as high as 3×1019cm−3was achieved. ©1995 American Institute of Physics.
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