A finite‐element method taking into account material nonlinearity was used to calculate the stress distribution in interconnecting lines and studs of a three‐dimensional multilevel metallization structure in a microelectronic device. A good correlation was obtained between the location of calculated stress concentration centers and the experimentally observed void sites in the stud. Accordingly, the failure mechanisms of the stress‐induced voiding in the stud and the crack formation in the underlying substrate were inferred to be associated with different stress components. Furthermore, the stress concentration centers were found to migrate as the temperature changes, which agrees with the experimental observations. ©1995 American Institute of Physics.