Kinetic modeling of the charging of nonconducting walls in a low pressure radio frequency inductively coupled plasma
作者:
U. Kortshagen,
期刊:
Journal of Vacuum Science&Technology A: Vacuum, Surfaces, and Films
(AIP Available online 1998)
卷期:
Volume 16,
issue 1
页码: 300-305
ISSN:0734-2101
年代: 1998
DOI:10.1116/1.580986
出版商: American Vacuum Society
数据来源: AIP
摘要:
This article investigates the overall charging of a nonconducting, plane wall (for instance a wafer) in a low pressure inductively coupled plasma. The problem is addressed using a two-dimensional kinetic model for a low pressure inductive discharge. Comparisons to experimental results show good agreement with the charging profiles predicted by the model. It is pointed out that the surface charge profile on a nonconducting wall is determined by the plasma homogeneity and the high energy part of the electron distribution function. An interpretation of the radial profiles of the sheath potential drop and of the surface charge potential in terms of the differential temperature of the electron distribution function in different energy ranges is presented.
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