Vapor phase hydrocarbon removal for Si processing
作者:
Srinandan R. Kasi,
M. Liehr,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 57,
issue 20
页码: 2095-2097
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.103952
出版商: AIP
数据来源: AIP
摘要:
Ultraviolet/Oxygen (UV/O2) based vapor phase cleaning of Si(100) surfaces dosed with specific organic molecules has been studied by surface and gas phase analytical techniques. The treatment results in chain scission and carbon volatilization as CO and CO2. At room temperature partial trapping of carbon‐containing species in the oxide is observed, while at elevated temperatures complete hydrocarbon removal occurs. UV/O2‐cleaned samples closely resemble those produced by the standard RCA clean in terms of hydrocarbon removal and oxide formation and this process appears suitable as vapor phase final Si wafer clean.
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