Al and B ion‐implantations in 6H‐ and 3C‐SiC
作者:
Mulpuri V. Rao,
Peter Griffiths,
O. W. Holland,
G. Kelner,
J. A. Freitas,
David S. Simons,
P. H. Chi,
M. Ghezzo,
期刊:
Journal of Applied Physics
(AIP Available online 1995)
卷期:
Volume 77,
issue 6
页码: 2479-2485
ISSN:0021-8979
年代: 1995
DOI:10.1063/1.358776
出版商: AIP
数据来源: AIP
摘要:
Low (keV) and high (MeV) energy Al and B implants were performed into n‐type 6H‐ and 3C‐SiC at both room temperature and 850 °C. The material was annealed at 1100, 1200, or 1400 °C for 10 min and characterized by secondary ion mass spectrometry, Rutherford backscattering (RBS), photoluminescence, Hall and capacitance‐voltage measurement techniques. For both Al and B implants, the implant species was gettered at 0.7 Rp(where Rpis the projected range) in samples implanted at 850 °C and annealed at 1400 °C. In the samples that were amorphized by the room temperature implantation, a distinct damage peak remained in the RBS spectrum even after 1400 °C annealing. For the samples implanted at 850 °C, which were not amorphized, the damage peak disappeared after 1400 °C annealing. P‐type conduction is observed only in samples implanted by Al at 850 °C and annealed at 1400 °C in Ar, with 1% dopant electrical activation. ©1995 American Institute of Physics.
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