Measurements on the Hall and the magnetoresistive effect in Fe‐Si amorphous films are described. The spontaneous Hall constantRsincreases as the Si content increases. A sensitive irreversible change ofRswas observed by annealing.Rsincreases by crystallization. The magnetoresistive effect &Dgr;&rgr;/&rgr; is low but &Dgr;&rgr; is comparable to those of Fe‐Ni crystalline alloys.