Scanning tunneling microscopy studies and computer simulations of annealing of gold films
作者:
D. Porath,
O. Millo,
J. I. Gersten,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1996)
卷期:
Volume 14,
issue 1
页码: 30-37
ISSN:1071-1023
年代: 1996
DOI:10.1116/1.588467
出版商: American Vacuum Society
关键词: THIN FILMS;GOLD;VACUUM EVAPORATION;ANNEALING;SURFACE STRUCTURE;GRAIN SIZE;RECRYSTALLIZATION;ACTIVATION ENERGY;DIFFUSION;COMPUTERIZED SIMULATION;TIME DEPENDENCE;TEMPERATURE DEPENDENCE;TEMPERATURE RANGE 400−1000 K;Au
数据来源: AIP
摘要:
The effect of thermal annealing on the surface morphology of thin gold films is studied using a scanning tunneling microscope (STM) and computer simulations. The gold films were thermally evaporated onto glass substrates, and were then measured with the STM at room temperature before and after annealing. The annealing treatments were done at temperatures between 200 and 500 °C and for periods ranging from 1 to 200 h. We present data showing the evolution of the average surface‐grain size and root‐mean‐square roughness amplitude of the gold films as a function of annealing temperature and duration. Our data suggest that surface diffusion is the main process active at low annealing temperatures of 300 °C and below. At higher annealing temperatures grain coarsening, which can be explained by recovery and recrystallization (secondary grain growth), is the dominant process contributing to large scale morphology changes. Computer simulations based on these processes account well for the experimental results, with activation energies of about 1.0 and 1.4 eV, for surface self‐diffusion of gold and grain coarsening, respectively.
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