Metal‐rich Pd‐silicide formation in thin‐film interactions
作者:
C. Canali,
L. Silvestri,
G. Celotti,
期刊:
Journal of Applied Physics
(AIP Available online 1979)
卷期:
Volume 50,
issue 9
页码: 5768-5772
ISSN:0021-8979
年代: 1979
DOI:10.1063/1.326717
出版商: AIP
数据来源: AIP
摘要:
Phase formation of metal‐rich Pd silicides was studied in palladium–amorphous‐silicon thin‐film interactions by means of4He+‐ion backscattering, Auger spectrometry, electron microprobe, and x‐ray diffractometry. In the initial stage of compound formation, where both unreacted Si and Pd layers ar present, the Pd2Si phase has been observed. At increasing annealing temperature in SiO2/Si(a)/Pd systems, where the metal‐film thickness was larger than that of amorphous‐Si film, phases richer and richer in metal have been detected, following exactly the phase diagram reported in literature. The Pd‐richest phase was identified as Pd4Si and is stable up to 650 °C in the presence of unreacted Pd. A crystallographic characterization of this new thin‐film end phase was performed on the basis of a triclinic unit cell.
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