Arsenic‐doped CdTe layers have been grown by organometallic vapor phase epitaxy in an atmospheric pressure reactor using arsine as the dopant gas. Doping levels above 2×1017cm−3have been reproducibly obtained for the first time in an epitaxial growth system, with a doping uniformity of ±20% over 1.5×1.5 cm. This is a much higher level of doping than usually possible in bulk growth systems. The layers were characterized by photoluminescence measurements at 12 K and by Hall measurements as a function of temperature. The ionization energy of the As acceptor was found to be about 62±4 meV from transport measurements. It was also shown that the electronic activity of the As incorporated is a function of the dimethylcadmium to diethyltelluride partial pressure ratio in the gas phase.