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X‐ray reflectivity of an Sb delta‐doping layer in silicon

 

作者: W. F. J. Slijkerman,   J. M. Gay,   P. M. Zagwijn,   J. F. van der Veen,   J. E. Macdonald,   A. A. Williams,   D. J. Gravesteijn,   G. F. A. van de Walle,  

 

期刊: Journal of Applied Physics  （AIP Available online 1990）
卷期: Volume 68, issue 10  

页码: 5105-5108

 

ISSN:0021-8979

 

年代: 1990

 

DOI:10.1063/1.347047

 

出版商: AIP

 

数据来源: AIP

 

摘要:

X‐ray reflectivity measurements were made on Si(001) crystals containing a delta‐doping layer of Sb atoms a few nanometers below the surface. The measurements show the Sb doping profile to be abrupt towards the substrate side of the sample and to decay towards the surface with a characteristic decay length of 1.01 nm.

 

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