Retention performance of sbtn semiconductor memory products
作者:
Tom Davenport,
Tim Bynum,
Sanjay Mitra,
期刊:
Integrated Ferroelectrics
(Taylor Available online 1999)
卷期:
Volume 27,
issue 1-4
页码: 271-277
ISSN:1058-4587
年代: 1999
DOI:10.1080/10584589908228474
出版商: Taylor & Francis Group
关键词: ferroelectric;FRAM®;SBTN;retention;test
数据来源: Taylor
摘要:
This study seeks to determine the feasibility and suitability of SBTN as a ferroelectric material used in the semiconductor wafer fabrication process. While Ramtron has years of experience producing PZT based parts, one vision for the future is that different materials may be required for different applications, depending on the specific product requirements. The family of bismuth layered perovskites may provide a path to low voltage applications, if the problems related to process integration and manufacturing that cause low bit count failures can be controlled. The design, manufacturing process and assembly are described, then a detailed evaluation is undertaken regarding retention performance.
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