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Retention performance of sbtn semiconductor memory products

 

作者: Tom Davenport,   Tim Bynum,   Sanjay Mitra,  

 

期刊: Integrated Ferroelectrics  (Taylor Available online 1999)
卷期: Volume 27, issue 1-4  

页码: 271-277

 

ISSN:1058-4587

 

年代: 1999

 

DOI:10.1080/10584589908228474

 

出版商: Taylor & Francis Group

 

关键词: ferroelectric;FRAM®;SBTN;retention;test

 

数据来源: Taylor

 

摘要:

This study seeks to determine the feasibility and suitability of SBTN as a ferroelectric material used in the semiconductor wafer fabrication process. While Ramtron has years of experience producing PZT based parts, one vision for the future is that different materials may be required for different applications, depending on the specific product requirements. The family of bismuth layered perovskites may provide a path to low voltage applications, if the problems related to process integration and manufacturing that cause low bit count failures can be controlled. The design, manufacturing process and assembly are described, then a detailed evaluation is undertaken regarding retention performance.

 

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