Direct electrical characterization of 1‐&mgr;m‐thick Si+preamorphized and epitaxially regrown silicon layers has revealed a low concentration of residual deep‐level defects within the regrown layer. A deep‐level trap atEc−0.40 eV has been found associated with the amorphous‐crystalline boundary dislocation loops. In addition, a near mid‐gap trap atEv+0.54 eV, observed inp‐type samples, is believed to be responsible for a spatially localized generation current of ∼2×10−6A/cm2associated with the dislocation loops.