This paper first reviews the properties of silicon carbide, in which polytypism is a salient feature. If a highly compensated insulating polytype is sandwiched between low resistive polytypes, space‐charge injection will occur. The theory of space‐charge‐limited current flow in the presence of traps is reviewed and a somewhat different version of the standard theory is presented, which shows more clearly the ohmic and space‐charge‐limiting regimes. Close analytical parametric forms forIandVare obtained. Experimental data onI‐Vcharacteristics and impedance are presented for 52–300 K. Except at the highest temperature, four regimes are clearly visible in theI‐Vcurves. A quantitative comparison with the theory is made and various transport quantities for &agr;‐SiC are deduced.