Scaled m.o.s. circuits: performances and simulation
作者:
P.Antognetti,
G.Puggelli,
期刊:
IEE Proceedings I (Solid-State and Electron Devices)
(IET Available online 1980)
卷期:
Volume 127,
issue 4
页码: 199-202
年代: 1980
DOI:10.1049/ip-i-1.1980.0040
出版商: IEE
数据来源: IET
摘要:
Transient analysis simulations are used to investigate the m.o.s. device scaling theorem. Calculations are presented of the power-delay curves of loaded static NOR gates for two sets of devices: one, a control device with seven micron channel length, and the other scaled from the control by 0.6. It is shown that, when devices are scaled correctly, circuit performance scales according to the prediction of the scaling theorem. Furthermore, considerations are presented on circuit performance degradation if power-supply voltages are not scaled similarly to device dimensions.
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